isc N-Channel MOSFET Transistor
STU11NM60ND
FEATURES ·Drain Current –ID= 6.3A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 6...
isc N-Channel MOSFET
Transistor
STU11NM60ND
FEATURES ·Drain Current –ID= 6.3A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.45Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±25
V
ID
Drain Current-Continuous
6.3
A
IDM
Drain Current-Single Pluse
40
A
PD
Total Dissipation @TC=25℃
90
W
TJ
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 1.38 ℃/W
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isc N-Channel MOSFET
Transistor
STU11NM60ND
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 5A
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VGS= ±20V;VDS= 0
VDS= 600V; VGS= 0 VDS= 600V; VGS= 0; Tj= 125℃
IS= 5A; VGS=0
MIN MAX UNIT
600
V
3
5
V
0.45
Ω
±100 nA
1 100
μA
1.5
V
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