isc N-Channel Mosfet Transistor
·FEATURES ·Drain Current ID= 8.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS=650V(Min) ·Fast...
isc N-Channel Mosfet
Transistor
·FEATURES ·Drain Current ID= 8.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS=650V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
±25
V
ID
Drain Current-continuous@ TC=25℃
8.5
A
IDM
Pulse Drain Current
34
A
Ptot
Total Dissipation@TC=25℃
70
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 1.79
UNIT ℃/W
STU12N65M5
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isc N-Channel Mosfet
Transistor
STU12N65M5
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
650
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
3
5
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 4.3A
430 mΩ
IGSS
Gate-Body Leakage Current
VGS= ±25V;VDS= 0
±100 nA
IDSS
Zero Gate Voltage Drain Current
VDS= Max rating VDS= Max rating; TC=125℃
1 µA
100
VSD
Diode Forward On-Voltage
IS= 8.5A ;VGS= 0
1.5
V
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