Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
STW21NM60ND
·FEATURES ·With TO-247 package ·Low input capacitan...
Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
STW21NM60ND
·FEATURES ·With TO-247 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGSS
Gate-Source Voltage
±25
V
ID
Drain Current-Continuous@TC=25℃ TC=125℃
17 10
A
IDM
Drain Current-Single Pulsed
68
A
PD
Total Dissipation @TC=25℃
140
W
Tch
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX
UNIT
0.89
℃/W
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Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
STW21NM60ND
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 1mA
600
V
VGS(th)
Gate Threshold Voltage
VDS= ±25V; ID=0.25mA
3
5
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=8.5A
170 220
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current
VGS= ±25V;VDS= 0V
Drain-Source Leakage Current
VDS= 600V; VGS= 0V；TJ=25℃ TJ=125℃
Diode forward voltage
ISD=17A, VGS = 0 V
±0.1 μA
1 100
μA
1.6
V
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