32NM50N

STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N N-channel 500 V, 0.1 Ω typ., 22 A MDmesh™ II Power MOSFET in D²PAK, TO-220FP, TO-220, TO-247 packages Datasheet — production data Features Order codes STB32NM50N STF32NM50N STP32NM50N STW32NM50N VDS RDS(on) max. 500 V 0.13 Ω ID PTOT 22 A 190 W 35 W 190 W 190 W ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. TAB 2 3 1 D²PAK TAB 3 2 1 TO-220 3 2 1 TO-220FP 3 2 1 TO-247 Figure 1. Internal schematic diagram $OR4!" ' 3 Table 1. Device summary Order codes STB32NM50N STF32NM50N STP32NM50N STW32NM50N Marking 32NM50N Package D2PAK TO-220FP TO-220 TO-247 !-V Packaging Tape and reel Tube Tube Tube August 2012 This is information on a product in full production. Doc ID 023436 Rev 1 1/21 www.st.com 21 Contents Contents STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...