W26NM50

STW26NM50 N-channel 500 V, 0.10 Ω, 30 A TO-247 MDmesh™ Power MOSFET Features Type STW26NM50 VDSS 500 V RDS(on) max < 0.12 Ω ID 30 A ■ High dv/dt and avalanche capabilities ■ Improved ESD capability ■ Low input capacitance and gate charge Application ■ Switching applications Description MDmesh™ technology applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers low onresistance, high dv/dt capability and excellent avalanche characteristics. 3 2 1 TO-247 Figure 1. Internal schematic diagram $ ' Table 1. Device summary Order codes STW26NM50 Marking W26NM50 3 !-V Package TO-247 Packaging Tube October 2009 Doc ID 8291 Rev 11 1/12 www.st.com 12 Contents Contents STW26NM50 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 8291 Rev 11 STW26NM50 1 Electrica...