19NM60N

STW19NM60N Automotive-grade N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II Power MOSFET in a TO-247 package Datasheet - production data Features 3 2 1 TO-247 Figure 1. Internal schematic diagram $ 4!" ' 3 Order code VDS (@Tjmax) STW19NM60N 650 V RDS(on) max. ID PTOT 0.285 Ω 13 A 110 W Designed for automotive applications and AEC-Q101 qualified 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Applications Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. !-V Order codes STW19NM60N Table 1. Device summary Marking Package 19NM60N TO-247 Packaging Tube October 2013 This is information on a product in full production. DocID024392 Rev 2 1/13 www.st.com 13 Contents Contents STW19NM60N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8...