11NM60ND

STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK Features Order codes VDSS (@Tjmax) RDS(on) max ID STD11NM60ND STF11NM60ND STI11NM60ND STP11NM60ND STU11NM60ND 650 V < 0.45 Ω 10 A 10 A(1) 10 A 10 A 10 A 1. Limited only by maximum temperature allowed ■ The worldwide best RDS(on)* area amongst the fast recovery diode devices ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Extremely high dv/dt and avalanche capabilities Application Switching applications Description The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Table 1. Device summary Order codes Marking STD11NM60ND STF11NM60ND STI11NM60ND STP11NM60ND STU11NM60ND 11NM60ND 3 1 DPAK 3 2 1 TO-220 3 2 1 IPAK 123 I²PAK 3 2 1 TO-220FP Figure 1. Internal schematic diagram $ ' 3 !-V Package DPAK TO-220FP I2PAK TO-220 IPAK Packaging Tape and reel Tube Tube Tube Tube October 2010 Doc ID 14625 Rev 2 1/19 www.st.com 19 Contents Contents STD/F/I/P/U11NM60ND 1 Electrical ratings . . . . ....