Document
STB12NM50ND STD12NM50ND, STF12NM50ND
N-channel 500 V, 0.29 Ω, 11 A, FDmesh™ II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP
Features
Type
VDSS (@Tjmax) RDS(on) max ID
STB12NM50ND
550 V
0.38 Ω 11 A
STD12NM50ND 550 V
0.38 Ω 11 A
STF12NM50ND
550 V
0.38 Ω 11 A
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance
Application
■ Switching applications
Description
FDmesh™ technology combines the MDmesh™ features with an intrinsic fast-recovery body diode. The resulting product has reduced onresistance and fast switching commutations, making it especially suitable for bridge topologies where low trr is required.
3 1
D2PAK
3 1
DPAK
3 2 1
TO-220FP
Figure 1. Internal schematic diagram
$ '
Table 1. Device summary Order codes
Marking
STB12NM50ND STD12NM50ND STF12NM50ND
12NM50ND 12NM50ND 12NM50ND
3
!-V
Package D2PAK DPAK
TO-220FP
Packaging Tape and reel Tape and reel
Tube
June 2009
Doc ID 14936 Rev 2
1/16
www.st.com
16
Contents
Contents
STB12NM50ND, STD12NM50ND, STF12NM50ND
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
Doc ID 14936 Rev 2
STB12NM50ND, STD12NM50ND, STF12NM50ND
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS=0)
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C IDM (2) Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
VISO dv/dt (3)
Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C)
Peak diode recovery voltage slope
Tstg Storage temperature Tj Operating junction temperature
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 11 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS
Value
D²PAK
DPAK
500 ± 25 11 6.9 44 100
TO-220FP
11 (1) 6.9 (1) 44 (1)
25
2500
40 -55 to 150
150
Unit
V V A A A W
V
V/ns °C °C
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-pcb Thermal resistance junction-pcb max
Rthj-amb Thermal resistance junction-amb max
Tl
Maximum lead temperature for soldering purposes
Value
D²PAK
DPAK
1.25
30
50
Unit TO-220FP
5
°C/W
°C/W
62.5
°C/W
300
.