N2NE10L

STN2NE10L N-channel 100V - 0.33Ω -2A - SOT-223 STripFET™ Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID 2 STN2NE10L 100V <0.4Ω 1.8A 3 ■ Exceptional dv/dt capability 2 1 ■ Avalanche rugged technology SOT-223 ■ 100% avalanche tested ) ■ Low threshold drive ct(s Description du This Power MOSFET is the latest development of ro STMicroelectronics unique "Single Feature P Size™" strip-based process. The resulting transistor shows extremely high packing density te for low on-resistance, rugged avalanche le characteristics and less critical alignment steps o therefore a remarkable manufacturing bs reproducibility. Internal schematic diagram ct(s) - O Applications du ■ Switching application Obsolete Pro Order codes Part number STN2NE10L Marking N2NE10L Package SOT-223 Packaging Tape & reel February 2007 Rev 5 1/12 www.st.com 12 Contents Contents STN2NE10L 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . ...