Document
STW57N65M5, STWA57N65M5
N-channel 650 V, 0.056 Ω typ., 42 A MDmesh™ V Power MOSFETs
in TO-247 and TO-247 long leads packages
Datasheet - production data
Features
3 2 1
TO-247 TO-247 long leads
Order codes VDS @ TJmax RDS(on) max ID
STW57N65M5 STWA57N65M5
710 V
0.063 Ω 42 A
• Worldwide best RDS(on)*area amongst the silicon based devices
• Higher VDSS rating, high dv/dt capability • Excellent switching performance • Easy to drive, 100% avalanche tested
Figure 1. Internal schematic diagram
'
Applications
• Switching applications
Description
* 6
$0Y
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Order codes STW57N65M5 STWA57N65M5
Table 1. Device summary
Marking
Packages
57N65M5
TO-247 TO-247 long leads
Packaging Tube
December 2013
This is information on a product in full production.
DocID024050 Rev 2
1/16
www.st.com
Contents
Contents
STW57N65M5, STWA57N65M5
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
DocID024050 Rev 2
STW57N65M5, STWA57N65M5
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings Parameter
Value
VGS Gate- source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
(1)
IDM
Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Max current during repetitive or single pulse avalanche IAR (pulse width limited by TJMAX)
EAS
(2)
dv/dt
Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50V) Peak diode recovery voltage slope
(3)
dv/dt MOSFET dv/dt ruggedness
Tstg Storage temperature
Tj Max. operating junction temperature
1. Pulse width limited by safe operating area. 2. ISD ≤ 42 A, di/dt ≤ 400 A/μs, VDS(peak) < V(BR)DSS, VDD = 400 V 3. VDS ≤ 520 V
± 25 42 26.5 168 250 11
960
15 50 -55 to 150 150
Symbol
Table 3. Thermal data Parameter
Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max
Value 0.50 50
Unit V A A A W A
mJ V/ns V/ns °C °C
Unit °C/W °C/W
DocID024050 Rev 2
3/16
16
.