N-Channel MOSFET
STFW69N65M5 STW69N65M5
N-channel 650 V, 0.037 Ω typ., 58 A MDmesh™ V Power MOSFET in TO-3PF and TO-247 packages
Datashee...
Description
STFW69N65M5 STW69N65M5
N-channel 650 V, 0.037 Ω typ., 58 A MDmesh™ V Power MOSFET in TO-3PF and TO-247 packages
Datasheet − production data
Features
Order codes VDSS @ TJmax RDS(on) max ID
STFW69N65M5 STW69N65M5
710 V
< 0.045 Ω 58 A
■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance
■ 100% avalanche tested
Applications
■ Switching applications
Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
1
3 2 1
TO-3PF
3 2 1
TO-247
Figure 1. Internal schematic diagram
$
' 3
!-V
Table 1. Device summary Order codes
STFW69N65M5 STW69N65M5
Marking 69N65M5
Package TO-3PF TO-247
September 2012
This is information on a product in full production.
Doc ID 022906 Rev 2
Packaging Tube
1/16
www.st.com
16
Contents
Contents
STFW69N65M5, STW69N65M5
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . ....
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