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N-Channel MOSFET. 69N65M5 Datasheet

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N-Channel MOSFET. 69N65M5 Datasheet
















69N65M5 MOSFET. Datasheet pdf. Equivalent













Part

69N65M5

Description

N-Channel MOSFET



Feature


STFW69N65M5 STW69N65M5 N-channel 650 V, 0.037 Ω typ., 58 A MDmesh™ V Power M OSFET in TO-3PF and TO-247 packages Dat asheet − production data Features Or der codes VDSS @ TJmax RDS(on) max ID STFW69N65M5 STW69N65M5 710 V < 0.045 Ω 58 A ■ Worldwide best RDS(on) * a rea ■ Higher VDSS rating and high dv/ dt capability ■ Excellent switching p erformance ■ 100% avalanche te.
Manufacture

STMicroelectronics

Datasheet
Download 69N65M5 Datasheet


STMicroelectronics 69N65M5

69N65M5; sted Applications ■ Switching applica tions Description These devices are N- channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined w ith STMicroelectronics’ well-known Po werMESH™ horizontal layout structure. The resulting product has extremely lo w onresistance, which is unmatched amon g siliconbased Power MOSFE.


STMicroelectronics 69N65M5

Ts, making it especially suitable for ap plications which require superior power density and outstanding efficiency. 1 3 2 1 TO-3PF 3 2 1 TO-247 Figure 1. Internal schematic diagram $ ' 3 !-V Table 1. Device summary Or der codes STFW69N65M5 STW69N65M5 Marki ng 69N65M5 Package TO-3PF TO-247 Sept ember 2012 This is information on a pro duct in full produ.


STMicroelectronics 69N65M5

ction. Doc ID 022906 Rev 2 Packaging T ube 1/16 www.st.com 16 Contents Con tents STFW69N65M5, STW69N65M5 1 Elec trical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electric al characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical charac teristics (curves).





Part

69N65M5

Description

N-Channel MOSFET



Feature


STFW69N65M5 STW69N65M5 N-channel 650 V, 0.037 Ω typ., 58 A MDmesh™ V Power M OSFET in TO-3PF and TO-247 packages Dat asheet − production data Features Or der codes VDSS @ TJmax RDS(on) max ID STFW69N65M5 STW69N65M5 710 V < 0.045 Ω 58 A ■ Worldwide best RDS(on) * a rea ■ Higher VDSS rating and high dv/ dt capability ■ Excellent switching p erformance ■ 100% avalanche te.
Manufacture

STMicroelectronics

Datasheet
Download 69N65M5 Datasheet




 69N65M5
STFW69N65M5
STW69N65M5
N-channel 650 V, 0.037 Ω typ., 58 A MDmesh™ V Power MOSFET
in TO-3PF and TO-247 packages
Datasheet production data
Features
Order codes VDSS @ TJmax RDS(on) max ID
STFW69N65M5
STW69N65M5
710 V
< 0.045 Ω 58 A
Worldwide best RDS(on) * area
Higher VDSS rating and high dv/dt capability
Excellent switching performance
100% avalanche tested
Applications
Switching applications
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
1
3
2
1
TO-3PF
3
2
1
TO-247
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
STFW69N65M5
STW69N65M5
Marking
69N65M5
Package
TO-3PF
TO-247
September 2012
This is information on a product in full production.
Doc ID 022906 Rev 2
Packaging
Tube
1/16
www.st.com
16




 69N65M5
Contents
Contents
STFW69N65M5, STW69N65M5
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
Doc ID 022906 Rev 2




 69N65M5
STFW69N65M5, STW69N65M5
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
IDM (2) Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
dv/dt (3) Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s; Tc=25°C)
Tstg Storage temperature
Tj Max. operating junction temperature
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area
3. ISD 58 A, di/dt 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Value
TO-3PF
TO-247
58(1)
36.5 (1)
232 (1)
± 25
79
15
58
36.5
232
330
3500
- 55 to 150
150
Value
TO-3PF
TO-247
1.58
0.38
50
Unit
V
A
A
A
W
V/ns
V
°C
°C
Unit
°C/W
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetetive or not repetetive
(pulse width limited by Tjmax )
12
A
EAS
Single pulse avalanche energy (starting tj=25°C,
Id= IAR; Vdd=50)
1410
mJ
Doc ID 022906 Rev 2
3/16




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