TK12P50W

MOSFETs Silicon N-Channel MOS (DTMOS) TK12P50W 1. Applications Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA) 3. Packaging and Internal Circuit TK12P50W 1: Gate 2: Drain (Heatsink) 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 11.5 A Drain current (pulsed) (Note 1) IDP 46.0 Power dissipation (Tc = 25) PD 100 W Single-pulse avalanche energy (Note 2) EAS 167 mJ Avalanche current IAR 3.0 A Reverse drain current (DC) (Note 1) IDR 11.5 Reverse drain current (pulsed) (Note 1) IDRP 46.0 Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual re...