TK31J60W

isc N-Channel MOSFET Transistor TK31J60W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.088Ω. ·Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=15.4A) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 30.8 A IDM Drain Current-Single Pulsed 123 A PD Total Dissipation @TC=25℃ 230 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.543 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=10mA VGS(th) Gate Threshold Voltage VDS=10V; ID=1.5mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=15.4A IGSS Gate-Source Leakage Current VGS= ±30V;VDS= 0V IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V VSDF Diode forward voltage IDR =30.8A, VGS = 0 V TK31J60W MIN TYP MAX UNIT 600 V 2.7 3.7 V 88 mΩ ±1 μA 10 μA 1.7 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information ...