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TK31N60X

N-Channel MOSFET

Description

isc N-Channel MOSFET Transistor TK31N60X ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.088Ω. ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=1.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA...

INCHANGE

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