TK380P60Y

isc N-Channel MOSFET Transistor TK380P60Y ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.38Ω ·Easy to control Gate switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous IDM Drain Current-Single Pulsed PD Total Dissipation @TC=25℃ Tj Operating Junction And Storage Temperature Tstg ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance 2 13 VALUE 600 ±30 9.7 38.8 80 -55~150 UNIT V V A A W ℃ MAX 1.56 UNIT ℃/W ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BVDSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage CONDITIONS VGS=0V; ID= 10mA VDS=VGS; ID= 0.36mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 4.9A IGSS Gate-Source Leakage Current VGS= ±30V IDSS Drain-Source Leakage Current VDS= 600V; VGS= 0V VSD Diode forward voltage Is= 9.7A, VGS = 0V MIN MAX UNIT 600 V 3 4 V 0.38 Ω ±1 μA 10 μA 1.7 V isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor TO-252 Package Outline TK380P60Y NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a gui...