SiC Schottky Barrier Diode
TRS10A65C
1. Applications
• Power Factor Correction • Solar Inverters • Uninterruptible Power...
SiC
Schottky Barrier Diode
TRS10A65C
1. Applications
Power Factor Correction Solar Inverters Uninterruptible Power Supplies DC-DC Converters
2. Features
(1) Forward DC current IF(DC) = 10 A (2) Repetitive peak reverse voltage VRRM = 650 V
3. Packaging and Internal Circuit Pin Assignment
TRS10A65C
1: Cathode 2: Anode
TO-220F-2L
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Repetitive peak reverse voltage Forward DC current Forward pulse current I2t limit value Junction temperature Storage temperature Isolation voltage (t = 1.0 s) Mounting torque
VRRM IF(DC)
IFP I2t Tj Tstg Vdis TOR
Note 1 Note 2
650 10 100 12.5 175 -55 to 175 2000 0.6
V A
A2s
V Nm
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: t = 100 µs Note 2: f = 50 Hz
Start of commercial production
2014-02
1
2014-04-21
Rev.2.0
5. Thermal Characteristics
TRS10A65C
Characteris...