Isc N-Channel MOSFET Transistor
UTT50N06L-TN3
·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate cha...
Isc N-Channel MOSFET
Transistor
UTT50N06L-TN3
·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20
50 35
200
PD
Total Dissipation @TC=25℃
114
Tch
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 1.1 100
UNIT ℃/W ℃/W
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Isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.25mA
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=50A
IGSS
Gate-Source Leakage Current
VGS=±20V;VDS= 0V
IDSS
Drain-Source Leakage Current VDS=60V; VGS= 0V
VSDF
Diode forward voltage
ISD=50A, VGS = 0V
UTT50N06L-TN3
MIN TYP MAX UNIT
60
V
1.0
3.0
V
13
20
mΩ
±0.1 μA
10
μA
1.5
V
Notice： ISC reserves the rights to make changes of the content herein the datashee...
