isc N-Channel MOSFET Transistor
AOT284L
·FEATURES ·Drain Current –ID= 105A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 80V(...
isc N-Channel MOSFET
Transistor
AOT284L
·FEATURES ·Drain Current –ID= 105A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 80V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 4.5mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Be suitable for synchronous rectification for server and
general purpose applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
80
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
105
A
IDM
Drain Current-Single Pulsed
400
A
PD
Total Dissipation @TC=25℃
250
W
Tj
Max. Operating Junction Temperature -55~175 ℃
Tstg
Storage Temperature
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX UNIT
0.6
℃/W
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID = 250μA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Source Leakage Current
IDSS
Drain-Source Leakage Current
VSD
Diode forward voltage
VDS= VGS; ID = 250μA
VGS= 10V; ID= 20A VGS= 10V; ID= 20A;TJ= 125℃
VGS= ±20V;VDS= 0V
VDS= 80V; VGS= 0V VDS= 80V; VGS= 0V;TJ= 55℃
Is= 1A; VGS = 0V
AOT284L
MIN MAX UNIT
80
V
2.3
3.3
V
4.5 7.2
mΩ
±100
nA
1 5
μA
1
V
NOTICE:...