AOT298L

isc N-Channel MOSFET Transistor AOT298L ·FEATURES ·Drain Current –ID= 58A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 14.5mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 58 A IDM Drain Current-Single Pulsed 130 A PD Total Dissipation @TC=25℃ 100 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 1.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250μA VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Source Leakage Current IDSS Drain-Source Leakage Current VSD Diode forward voltage VDS= VGS; ID = 250μA VGS= 10V; ID= 20A VGS= 10V; ID= 20A;TJ= 125℃ VGS= ±20V;VDS= 0V VDS= 100V; VGS= 0V VDS= 100V; VGS= 0V;TJ= 55℃ Is= 1A; VGS = 0V AOT298L MIN MAX UNIT 100 V 2.7 4.1 V 14.5 24 mΩ ±100 nA 1 5 μA 1 V NOT...