isc N-Channel MOSFET Transistor
AOT430
FEATURES ·Drain Current –ID=80A@ TC=25℃ ·Drain Source Voltage-
: VDSS=75V(Min) ...
isc N-Channel MOSFET
Transistor
AOT430
FEATURES ·Drain Current –ID=80A@ TC=25℃ ·Drain Source Voltage-
: VDSS=75V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 11.5mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
75
V
VGS
Gate-Source Voltage-Continuous
±25
V
ID
Drain Current-Continuous
80
A
IDM
Drain Current-Single Pluse
200
A
PD
Total Dissipation @TC=25℃
268
W
TJ
Max. Operating Junction Temperature -55~175 ℃
Tstg
Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 0.56 ℃/W
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= 5V; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 30A
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VGS= ±25V;VDS= 0
VDS= 60V; VGS= 0 VDS= 60V; VGS= 0@TJ= 55℃
IS= 1A; VGS= 0
AOT430
MIN MAX UNIT
75
V
2
4
V
11.5
mΩ
±1
uA
1 5
μA
1
V
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