isc N-Channel MOSFET Transistor
AOT480L
FEATURES ·Drain Current –ID=180A@ TC=25℃ ·Drain Source Voltage-
: VDSS=80V(Min...
isc N-Channel MOSFET
Transistor
AOT480L
FEATURES ·Drain Current –ID=180A@ TC=25℃ ·Drain Source Voltage-
: VDSS=80V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 4.5mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
80
V
VGS
Gate-Source Voltage-Continuous
±25
V
ID
Drain Current-Continuous
180
A
IDM
Drain Current-Single Pluse
500
A
PD
Total Dissipation @TC=25℃
333
W
TJ
Max. Operating Junction Temperature -55~175 ℃
Tstg
Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 0.45 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= 5V; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 20A
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VGS= ±25V;VDS= 0
VDS= 80V; VGS= 0 VDS= 80V; VGS= 0@TJ= 55℃
IS= 1A; VGS= 0
AOT480L
MIN MAX UNIT
80
V
2
4
V
4.5
mΩ
±100 nA
10 50
μA
1
V
NOTICE： ISC reserves the rights to make chang...
