AOT2608L

isc N-Channel MOSFET Transistor AOT2608L ·FEATURES ·Drain Current –ID= 72A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.6mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 72 A IDM Drain Current-Single Pulsed 180 A PD Total Dissipation @TC=25℃ 100 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 1.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250μA VGS(th) Gate Threshold Voltage VDS= VGS; ID = 250μA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 20A IGSS Gate-Source Leakage Current IDSS Drain-Source Leakage Current VSD Diode forward voltage VGS= ±20V;VDS= 0V VDS= 60V; VGS= 0V VDS= 60V; VGS= 0V；TJ=125℃ Is= 1A; VGS = 0V AOT2608L MIN MAX UNIT 60 V 2.6 3.6 V 7.6 mΩ ±0.1 μA 1 5 μA 1 V NOTICE： ISC reserves the rights to m...