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AOTF42S60L Dataheets PDF



Part Number AOTF42S60L
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet AOTF42S60L DatasheetAOTF42S60L Datasheet (PDF)

isc N-Channel MOSFET Transistor AOTF42S60L ·FEATURES ·Drain Current –ID= 39A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 99mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS .

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isc N-Channel MOSFET Transistor AOTF42S60L ·FEATURES ·Drain Current –ID= 39A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 99mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 39 A IDM Drain Current-Single Pulsed 166 A PD Total Dissipation @TC=25℃ 37.9 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 3.3 ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor AOTF42S60L ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250μA 600 V VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Source Leakage Current IDSS Drain-Source Leakage Current VSD Diode forward voltage VDS= 5V; ID = 250μA VGS= 10V; ID= 21A VGS= 10V; ID= 21A;TJ= 150℃ VGS= ±30V;VDS= 0V VDS= 600V; VGS= 0V VDS= 480V; VGS= 0V;TJ= 150℃ Is= 21A; VGS = 0V 2.5 3.8 V 99 280 mΩ ±100 nA 10 1 μA 0.84 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark .


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