AOTF260L

AOTF260L 60V N-Channel MOSFET General Description Product Summary The AOTF260L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 100% UIS Tested 100% Rg Tested Top View TO220F Bottom View 60V 92A < 2.6mΩ < 3.0mΩ D G DS S DG G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 92 66.5 368 19 15 128 819 46.5 23.5 1.9 1.2 -55 to 175 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 12 54 Maximum Junction-to-Case Steady-State RθJC 2.6 Max 15 65 3.2 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 0: Aug. 2012 www.aosmd.com Page 1 of 6 AOTF260L Electrical Characteristics ...