AOTF262L

AOTF262L 60V N-Channel MOSFET General Description Trench Power MV MOSFET technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) Applications Synchronus Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested Top View TO-220F Bottom View 60V 85A < 3.6mΩ < 4.1mΩ D G DS S DG Orderable Part Number AOTF262L Package Type TO-220F Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike 10µs VSPIKE Peak diode recovery dv/dt dv/dt Power Dissipation B Power Dissipation A TC=25°C TC=100°C TA=25°C TA=70°C PD PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 12 48 Maximum Junction-to-Case Steady-State RθJC 2.5 G Form Tube S Minimum Order Quantity 1000 Maximum 60 ±20 85 60 340 17.5 13.5 115 661 72 8 50 25 2.1 1.3 -55 to 175 Units V V A A A mJ V V/ns W W °C Max 15 60 3 Units °C/W °C/W °C/W Rev.1.0: August 2014 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless other...