AOTF286L

isc N-Channel MOSFET Transistor AOTF286L ·FEATURES ·Drain Current –ID= 56A@ TC=25℃ ·Drain Source Voltage- : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.0mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 80 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 56 A IDM Drain Current-Single Pulsed 225 A PD Total Dissipation @TC=25℃ 37.5 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 4.0 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250μA VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Source Leakage Current IDSS Drain-Source Leakage Current VSD Diode forward voltage VDS= VGS; ID = 250μA VGS= 10V; ID= 20A VGS= 10V; ID= 20A；TJ= 125℃ VGS= ±20V;VDS= 0V VDS= 80V; VGS= 0V VDS= 80V; VGS= 0V;TJ= 55℃ Is= 1A; VGS = 0V AOTF286L MIN MAX UNIT 80 V 2.3 3.3 V 6.0 9.8 mΩ ±100 nA 1 5 μA 1 V NOTICE...