AOTF286L

AOTF286L 80V N-Channel MOSFET General Description Trench Power MV MOSFET technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) Applications Synchronous Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested Top View TO220F Bottom View 80V 56A < 6mΩ < 8mΩ D G DS S DG Orderable Part Number AOTF286L Package Type TO-220F Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 10 45 Maximum Junction-to-Case Steady-State RθJC 3.3 G Form Tube S Minimum Order Quantity 1000 Maximum 80 ±20 56 39 225 13.5 10.5 50 125 96 37.5 18.5 2.2 1.4 -55 to 175 Units V V A A A mJ V W W °C Max 15 55 4.0 Units °C/W °C/W °C/W Rev.1.0: January 2015 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditio...