AOTF2606L

sc N-Channel MOSFET Transistor AOTF2606L ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 54 A IDM Drain Current-Single Pulsed 260 A PD Total Dissipation @TC=25℃ 36.5 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 4.1 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250μA VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Source Leakage Current VDS= VGS; ID = 250μA VGS= 10V; ID= 20A VGS= 10V; ID= 20A;TJ=125℃ VGS= ±20V;VDS= 0V IDSS Drain-Source Leakage Current VDS= 60V; VGS= 0V VSD Diode forward voltage Is= 1A; VGS = 0V AOTF2606L MIN TYP MAX UNIT 60 V 2.5 3.5 V 6.5 10.5 mΩ ±0.1 μA 1 μA 1.2 V NOTICE： ISC reserves the rights to make changes of the content here...