isc N-Channel MOSFET Transistor
AOW11N60
FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(...
isc N-Channel MOSFET
Transistor
AOW11N60
FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.7Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
11
A
IDM
Drain Current-Single Pluse
39
A
PD
Total Dissipation @TC=25℃
272
W
TJ
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 0.46 ℃/W
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isc N-Channel MOSFET
Transistor
AOW11N60
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= 5V; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 5.5A
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VGS= ±30V;VDS= 0
VDS= 600V; VGS= 0 VDS= 480V; VGS= 0@TJ= 55℃
IS= 1A; VGS= 0
MIN MAX UNIT
600
V
3.3
4.5
V
0.7
Ω
±100 nA
1 10
μA
1
V
NOTICE： ISC reserves the rights to ma...
