isc N-Channel MOSFET Transistor
AOW15S65
FEATURES ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 650V(...
isc N-Channel MOSFET
Transistor
AOW15S65
FEATURES ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.78Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
15
A
IDM
Drain Current-Single Pluse
60
A
PD
Total Dissipation @TC=25℃
208
W
TJ
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.6
℃/W
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isc N-Channel MOSFET
Transistor
AOW15S65
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
CONDITIONS VGS= 0; ID= 0.25mA
VDS= 5V; ID= 0.25mA
VGS= 10V; ID= 7.5A
VGS= ±30V;VDS= 0 VDS= 650V; VGS= 0 VDS= 520V; VGS= 0;TJ=150℃ IS= 7.5A; VGS= 0
MIN TYPE MAX UNIT
650
V
2.6
4.0
V
0.29 Ω
±100 nA
10
1
μA
0.82
V
NOTICE： ISC reserves the rig...
