N-Channel MOSFET
AOW284
80V N-Channel AlphaMOS
General Description
• Trench Power AlphaMOS (αMOS MV) technology • Low RDS(ON) • Low Gate...
Description
AOW284
80V N-Channel AlphaMOS
General Description
Trench Power AlphaMOS (αMOS MV) technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V)
Applications
Synchronus Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications
100% UIS Tested 100% Rg Tested
Top View
TO-262
Bottom View
80V 105A < 4.3mΩ < 5.5mΩ
D
Orderable Part Number
AOW284
G DS
G SD
Package Type
TO-262
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current G
TC=25°C TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain Current
TA=25°C TA=70°C
IDSM
Avalanche Current C
IAS
Avalanche energy L=0.1mH C
EAS
VDS Spike Power Dissipation B
10µs TC=25°C TC=100°C
VSPIKE PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 15 55 0.52
G
Form
Tube
S
Minimum Order Quantity
1000
Maximum 80 ±20 105 82 400 15 12 65 211 96 250 125 1.9 1.2
-55 to 175
Units V V
A
A A mJ V W
W °C
Max
Units
20
°C/W
65
°C/W
0.6
°C/W
Rev.1.0: March 2014
www.aosmd.com
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Cond...
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