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AOW296

Alpha & Omega Semiconductors

N-Channel MOSFET

AOW296/AOWF296 100V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low ...


Alpha & Omega Semiconductors

AOW296

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Description
AOW296/AOWF296 100V N-Channel AlphaSGT TM General Description Trench Power AlphaSGTTM technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications RoHS and Halogen-Free Compliant Product Summary VDS RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 100V < 9.7mΩ < 12.2mΩ Applications Synchronous Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested TO-262 TO-262F D Top View Bottom View Top View Bottom View D AOW296 DS G Orderable Part Number AOW296 AOWF296 S DG AOWF296 Package Type TO-262 TO-262F GDS SDG Form Tube Tube G S Minimum Order Quantity 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOW296 (Max) AOWF296 (Max) Drain-Source Voltage VDS 100 Gate-Source Voltage Continuous Drain TC=25°C Current G(AOW) TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C VDS Spike I 10µs TC=25°C Power Dissipation B TC=100°C VGS ID IDM IDSM IAS EAS VSPIKE PD ±20 70 37 46.5 23.5 180 150 18 21 14.5 16.5 40 80 120 104 26 41.5 10.5 TA=25°C Power Dissipation A TA=70°C 6.2 8.3 PDSM 4.0 5.3 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA...




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