N-Channel MOSFET
AOW296/AOWF296
100V N-Channel AlphaSGT TM
General Description
• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low ...
Description
AOW296/AOWF296
100V N-Channel AlphaSGT TM
General Description
Trench Power AlphaSGTTM technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications RoHS and Halogen-Free Compliant
Product Summary
VDS
RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V)
100V
< 9.7mΩ < 12.2mΩ
Applications
Synchronous Rectification in DC/DC and AC/DC Converters
Industrial and Motor Drive applications
100% UIS Tested 100% Rg Tested
TO-262
TO-262F
D
Top View
Bottom View
Top View
Bottom View
D
AOW296
DS G
Orderable Part Number
AOW296 AOWF296
S DG
AOWF296
Package Type
TO-262 TO-262F
GDS
SDG
Form
Tube Tube
G S
Minimum Order Quantity
1000 1000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOW296 (Max) AOWF296 (Max)
Drain-Source Voltage
VDS
100
Gate-Source Voltage
Continuous Drain TC=25°C
Current G(AOW)
TC=100°C
Pulsed Drain Current C
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
VDS Spike I
10µs
TC=25°C Power Dissipation B TC=100°C
VGS ID
IDM IDSM
IAS EAS VSPIKE PD
±20
70
37
46.5
23.5
180
150
18
21
14.5
16.5
40
80
120
104
26
41.5
10.5
TA=25°C Power Dissipation A TA=70°C
6.2
8.3
PDSM
4.0
5.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Units V V
A
A A mJ V W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA...
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