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AOW410

N-Channel MOSFET

Description

isc N-Channel MOSFET Transistor AOW410 ·FEATURES ·Drain Current –ID= 150A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.5mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and...

INCHANGE

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