Document
AOW2500
150V N-Channel MOSFET
General Description
Product Summary
The AOW2500 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V)
100% UIS Tested 100% Rg Tested
TO-262
Top View
Bottom View
150V 152A < 6.2mΩ < 7.3mΩ
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC=25°C TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain Current
TA=25°C TA=70°C
IDSM
Avalanche Current C
IAS
Avalanche energy L=0.3mH C
EAS
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 150 ±20 152 107 440 11.5 9.0 65 634 375 187.5 2.1 1.3
-55 to 175
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 12 48 0.26
Max 15 60 0.4
Units V V
A
A A mJ W
W °C
Units °C/W °C/W °C/W
Rev.1.0: July 2013
www.aosmd.com
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AOW2500
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS VGS(th)
Gate-Body leakage current Gate Threshold Voltage
RDS(ON) Static Drain-Source On-Resistance
Conditions
Min Typ Max Units
ID=250µA, VGS=0V
150
VDS=150V, VGS=0V
TJ=55°C
VDS=0V, VGS=±20V
VDS=VGS,ID=250µA
2.3 2.8
VGS=10V, ID=20A
5.1
TO262
TJ=125°C
9.9
VGS=6V, ID=20A TO262
5.6
V 1
µA 5 ±100 nA 3.5 V 6.2
mΩ 12
7.3 mΩ
gFS
Forward Transconductance
VSD
Diode Forward Voltage
VDS=5V, ID=20A IS=1A,VGS=0V
70
S
0.66 1
V
IS
Maximum Body-Diode Continuous Current
152 A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=75V, f=1MHz VGS=0V, VDS=0V, f=1MHz
6460
pF
586
pF
22
pF
1 2.1 3.2 Ω
SWITCHING PARAMETERS
Qg(10V) Qgs
Total Gate Charge Gate Source Charge
VGS=10V, VDS=75V, ID=20A
97 136 nC
22.5
nC
Qgd
Gate Drain Charge
17
nC
tD(on) tr tD(off)
Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime
18.5
ns
VGS=10V, VDS=75V, RL=3.75Ω,
20
ns
RGEN=3Ω
67.5
ns
tf
Turn-Off Fall Time
14
ns
trr
Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
90
ns
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
1090
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and.