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AOW2500 Dataheets PDF



Part Number AOW2500
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel MOSFET
Datasheet AOW2500 DatasheetAOW2500 Datasheet (PDF)

AOW2500 150V N-Channel MOSFET General Description Product Summary The AOW2500 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) RDS(ON) (at V.

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AOW2500 150V N-Channel MOSFET General Description Product Summary The AOW2500 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 100% UIS Tested 100% Rg Tested TO-262 Top View Bottom View 150V 152A < 6.2mΩ < 7.3mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 150 ±20 152 107 440 11.5 9.0 65 634 375 187.5 2.1 1.3 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 12 48 0.26 Max 15 60 0.4 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev.1.0: July 2013 www.aosmd.com Page 1 of 6 AOW2500 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance Conditions Min Typ Max Units ID=250µA, VGS=0V 150 VDS=150V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS,ID=250µA 2.3 2.8 VGS=10V, ID=20A 5.1 TO262 TJ=125°C 9.9 VGS=6V, ID=20A TO262 5.6 V 1 µA 5 ±100 nA 3.5 V 6.2 mΩ 12 7.3 mΩ gFS Forward Transconductance VSD Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V 70 S 0.66 1 V IS Maximum Body-Diode Continuous Current 152 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=75V, f=1MHz VGS=0V, VDS=0V, f=1MHz 6460 pF 586 pF 22 pF 1 2.1 3.2 Ω SWITCHING PARAMETERS Qg(10V) Qgs Total Gate Charge Gate Source Charge VGS=10V, VDS=75V, ID=20A 97 136 nC 22.5 nC Qgd Gate Drain Charge 17 nC tD(on) tr tD(off) Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime 18.5 ns VGS=10V, VDS=75V, RL=3.75Ω, 20 ns RGEN=3Ω 67.5 ns tf Turn-Off Fall Time 14 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 90 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 1090 nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and.


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