057N08N

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,80V OptiMOS™3Power-Transistor IPA057N08N3G DataSheet Rev.2.2 Final PowerManagement&Multimarket OptiMOS(TM)3 Power-Transistor Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Fully isolated package (2500 VAC; 1 minute) Type IPA057N08N3 G IPA057N08N3 G Product Summary VDS RDS(on),max ID 80 V 5.7 mW 60 A Package Marking PG-TO220-FP 057N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current ID T C=25 °C2) 60 T C=100 °C 43 Pulsed drain current3) I D,pulse T C=25 °C 240 Avalanche energy, single pulse4) E AS I D=60 A, R GS=25 W 290 Gate source voltage V GS ±20 Power dissipation P tot T C=25 °C 39 Operating and storage temperature T j, T stg -55 ... 175 IEC climatic category; DIN IEC 68-1 55/175/56 1)J-STD20 and JESD22 2) Current is limited by package; with an RthJC=1 K/W in a standard TO-220 package the chip is able to carry 119A. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Unit A mJ V W °C Rev. 2.2 page 1 2015-08-27 Parameter Symbol Conditions Therma...