6R099P

CoolMOSTM Power Transistor Features Worldwide best R ds,on in TO220 Ultra low gate charge Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ IPI60R099CP 650 V 0.099 Ω 60 nC PG-TO262-3-1 CoolMOS CP is specially designed for: Hard switching SMPS topologies for Server and Telecon Type IPI60R099CP Package PG-TO262 Marking 6R099P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C Pulsed drain current2) I D,pulse T C=100 °C T C=25 °C Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness E AS E AR I AR dv /dt I D=11 A, V DD=50 V I D=11 A, V DD=50 V V DS=0...480 V Gate source voltage V GS static AC (f >1 Hz) Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg Mounting torque M3 and M3.5 screws Rev. 2.1 page 1 Value 31 19 93 800 1.2 11 50 ±20 ±30 255 -55 ... 150 60 Unit A mJ A V/ns V W °C Ncm 2014-05­28 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse T C=25 °C dv /dt IPI60R099CP Value 18 93 15 Unit A V/ns Parameter Symbol Conditions min. Values typ. Unit max. Thermal ...