79CN10N

IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS™2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 78 mW 13 A 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectification Halogen-free according to IEC61249-2-21 Type IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G Package Marking PG-TO263-3 79CN10N PG-TO252-3 78CN10N PG-TO262-3 80CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions PG-TO220-3 80CN10N Value Unit Continuous drain current ID T C=25 °C T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=13 A, R GS=25 W Gate source voltage3) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) see figure 3 3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V 13 A 9 52 17 mJ ±20 V 31 W -55 ... 175 °C 55/175/56 Rev. 1.091 page 1 2013-07-25 IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction - case R thJC - Thermal resistance, junction - R thJA minimal footprint - amb...