Document
IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G
OptiMOS™2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO252) ID
100 V 78 mW 13 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB79CN10N G
IPD78CN10N G
IPI80CN10N G
IPP80CN10N G
Package Marking
PG-TO263-3 79CN10N
PG-TO252-3 78CN10N
PG-TO262-3 80CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
PG-TO220-3 80CN10N
Value
Unit
Continuous drain current
ID
T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=13 A, R GS=25 W
Gate source voltage3)
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3 3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
13
A
9
52
17
mJ
±20
V
31
W
-55 ... 175
°C
55/175/56
Rev. 1.091
page 1
2013-07-25
IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics
Thermal resistance, junction - case R thJC
-
Thermal resistance, junction -
R thJA minimal footprint
-
ambient (TO220, TO262, TO263)
6 cm2 cooling area4)
-
Thermal resistance, junction ambient (TO252, TO251)
minimal footprint
-
6 cm2 cooling area4)
-
-
4.9 K/W
-
62
-
40
-
75
-
50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
100
-
Gate threshold voltage
V GS(th) V DS=V GS, I D=12 µA
2
3
Zero gate voltage drain current
I DSS
V DS=80 V, V GS=0 V, T j=25 °C
-
0.1
-V 4
1 µA
V DS=80 V, V GS=0 V, T j=125 °C
-
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=13 A, (TO252)
-
10
100
1
100 nA
59
78 mW
V GS=10 V, I D=13 A,
-
(TO251)
59
78
V GS=10 V, I D=13 A,
-
(TO263)
61
79
Gate resistance Transconductance
V GS=10 V, I D=13 A,
-
(TO220, TO262)
RG
-
g fs
|V DS|>2|I D|R DS(on)max, I D=13 A
7
61
80
0.8
-W
13
-S
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.091
page 2
2013-07-25
Parameter
Symbol Conditions
IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G
min.
Values typ.
Unit max.
Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
C iss
-
C oss
V GS=0 V, V DS=50 V, f =1 MHz
-
C rss
-
t d(on)
-
tr
V DD=50 V, V GS=10 V,
-
t d(off)
I D=13 A, R G,ext=2.4 W
-
tf
-
538
716 pF
76
101
8
12
9
13 ns
4
6
13
18
3
4
Gate Charge Characteristics5) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge
Q gs
-
3
4 nC
Q gd
-
Q sw
V DD=50 V, I D=13 A, V GS=0 to 10 V
-
Qg
-
2
3
3
5
8
11
V plateau
-
5.7
-V
Q oss
V DD=50 V, V GS=0 V
-
8
10 nC
Reverse Diode Diode continous forward current Diode pulse current
Diode forward voltage
Reverse recovery time Reverse recovery charge
IS I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=13 A, T j=25 °C
t rr
V R=50 V, I F=I S,
Q rr
di F/dt =100 A/µs
5) See figure 16 for gate charge parameter definition
-
-
13 A
-
-
52
-
1
1.2 V
-
67
- ns
-
114
- nC
Rev. 1.091
page 3
2013-07-25
1 Power dissipation P tot=f(T C)
40
IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G
2 Drain current I D=f(T C); V GS≥10 V
15
Ptot [W] ID [A]
30 10
20
5 10
0
0
50
100
150
200
TC [°C]
0
0
50
100
150
200
TC [°C]
3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p
102
1 µs 10 µs
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
10
ID [A] ZthJC [K/W]
0.5 100 µs
101
1 ms
0.2
1
0.1
100
10 ms
DC
0.05 0.02
0.01
single pulse
10-1
0.1
10-1
100
101
102
103
VDS [V]
tp [s]
Rev. 1.091
page 4
2013-07-25
ID [A] RDS(on) [mW]
5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS
60
10 V
40
8V
7V
6.5 V
20
6V
5.5 V
5V
4.5 V
0
0
1
2
3
4
VDS [V]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
30
IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS
200
180
160
140
5 V 5.5 V 6 V
6.5 V
7V
120
100
80
8V
10 V
60
40
20
0
5
0
10
20
30
40
ID [A]
8 Typ. forward transconductance g fs=f(I D); T j=25 °C
20
25 15
20
ID .