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78CN10N Dataheets PDF



Part Number 78CN10N
Manufacturers Infineon
Logo Infineon
Description Power Transistor
Datasheet 78CN10N Datasheet78CN10N Datasheet (PDF)

IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 78 mW 13 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 .

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IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 78 mW 13 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G Package Marking PG-TO263-3 79CN10N PG-TO252-3 78CN10N PG-TO262-3 80CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions PG-TO220-3 80CN10N Value Unit Continuous drain current ID T C=25 °C T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=13 A, R GS=25 W Gate source voltage3) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) see figure 3 3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V 13 A 9 52 17 mJ ±20 V 31 W -55 ... 175 °C 55/175/56 Rev. 1.091 page 1 2013-07-25 IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction - case R thJC - Thermal resistance, junction - R thJA minimal footprint - ambient (TO220, TO262, TO263) 6 cm2 cooling area4) - Thermal resistance, junction ambient (TO252, TO251) minimal footprint - 6 cm2 cooling area4) - - 4.9 K/W - 62 - 40 - 75 - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 100 - Gate threshold voltage V GS(th) V DS=V GS, I D=12 µA 2 3 Zero gate voltage drain current I DSS V DS=80 V, V GS=0 V, T j=25 °C - 0.1 -V 4 1 µA V DS=80 V, V GS=0 V, T j=125 °C - Gate-source leakage current I GSS V GS=20 V, V DS=0 V - Drain-source on-state resistance R DS(on) V GS=10 V, I D=13 A, (TO252) - 10 100 1 100 nA 59 78 mW V GS=10 V, I D=13 A, - (TO251) 59 78 V GS=10 V, I D=13 A, - (TO263) 61 79 Gate resistance Transconductance V GS=10 V, I D=13 A, - (TO220, TO262) RG - g fs |V DS|>2|I D|R DS(on)max, I D=13 A 7 61 80 0.8 -W 13 -S 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.091 page 2 2013-07-25 Parameter Symbol Conditions IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G min. Values typ. Unit max. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time C iss - C oss V GS=0 V, V DS=50 V, f =1 MHz - C rss - t d(on) - tr V DD=50 V, V GS=10 V, - t d(off) I D=13 A, R G,ext=2.4 W - tf - 538 716 pF 76 101 8 12 9 13 ns 4 6 13 18 3 4 Gate Charge Characteristics5) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Q gs - 3 4 nC Q gd - Q sw V DD=50 V, I D=13 A, V GS=0 to 10 V - Qg - 2 3 3 5 8 11 V plateau - 5.7 -V Q oss V DD=50 V, V GS=0 V - 8 10 nC Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse T C=25 °C V SD V GS=0 V, I F=13 A, T j=25 °C t rr V R=50 V, I F=I S, Q rr di F/dt =100 A/µs 5) See figure 16 for gate charge parameter definition - - 13 A - - 52 - 1 1.2 V - 67 - ns - 114 - nC Rev. 1.091 page 3 2013-07-25 1 Power dissipation P tot=f(T C) 40 IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G 2 Drain current I D=f(T C); V GS≥10 V 15 Ptot [W] ID [A] 30 10 20 5 10 0 0 50 100 150 200 TC [°C] 0 0 50 100 150 200 TC [°C] 3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 102 1 µs 10 µs 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 10 ID [A] ZthJC [K/W] 0.5 100 µs 101 1 ms 0.2 1 0.1 100 10 ms DC 0.05 0.02 0.01 single pulse 10-1 0.1 10-1 100 101 102 103 VDS [V] tp [s] Rev. 1.091 page 4 2013-07-25 ID [A] RDS(on) [mW] 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 60 10 V 40 8V 7V 6.5 V 20 6V 5.5 V 5V 4.5 V 0 0 1 2 3 4 VDS [V] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 30 IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 200 180 160 140 5 V 5.5 V 6 V 6.5 V 7V 120 100 80 8V 10 V 60 40 20 0 5 0 10 20 30 40 ID [A] 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 20 25 15 20 ID .


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