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H30R1353

Infineon

IGBT

ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW30N135R3 Datasheet IndustrialPowerCon...


Infineon

H30R1353

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Description
ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW30N135R3 Datasheet IndustrialPowerControl IHW30N135R3 ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode  Features: Offersnewhigherbreakdownvoltageto1350Vforimproved reliability Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly TRENCHSTOPTMtechnologyoffering: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCEsat LowEMI QualifiedaccordingtoJESD-022fortargetapplications Pb-freeleadplating;RoHScompliant Halogenfree(accordingtoIEC61249-2-21) CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ C G E Applications: Inductivecooking Inverterizedmicrowaveovens Resonantconverters Softswitchingapplications G C E Packagepindefinition: Pin1-gate Pin2&backside-collector Pin3-emitter KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25°C IHW30N135R3 1350V 30A 1.65V Tvjmax 175°C Marking H30R1353 Package PG-TO247-3 Datasheet www.infineon.com PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.3 2019-09-19 IHW30N135R3 ResonantSwitchingSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....




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