iscN-Channel MOSFET Transistor
IRFB13N50A
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =0.45Ω (MAX) ·Enhancement...
iscN-Channel MOSFET
Transistor
IRFB13N50A
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =0.45Ω (MAX) ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
14
A
IDM
Drain Current-Single Pulsed
56
A
PD
Total Dissipation @TC=25℃
250
W
Tj
Max. Operating Junction Temperature -55~150
℃
Tstg
Storage Temperature
-55~150
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 0.5
UNIT ℃/W
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iscN-Channel MOSFET
Transistor
IRFB13N50A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
500
V
VGS(th)
Gate Threshold Voltage
VDS= 10V; ID=0.25mA
2.0
4.0
V
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=8.4A
0.45
Ω
IGSS IDSS VSDF
Gate-Source Leakage Current
VGS= ±30V;VDS= 0V
Drain-Source Leakage Current
VDS=500V; VGS= 0V VDS=400V; VGS= 0V;TJ=125℃
Diode forward voltage
IDR =14A, VGS = 0 V
±100 nA
25 250
μA
1.5
V
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