IRFBC30A

IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 2.2 23 5.4 11 Single D TO-220AB G S D G ORDERING INFORMATION Package Lead (Pb)-free S N-Channel MOSFET SnPb FEATURES Low Gate Charge Qg Results in Simple Drive Requirement Available Improved Gate, Avalanche and Dynamic dV/dt RoHS* Ruggedness COMPLIANT Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss Specified Compliant to RoHS Directive 2002/95/EC APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptable Power Supply High Speed Power Switching TYPICAL SMPS TOPOLOGY Single Transistor Flyback TO-220AB IRFBC30APbF SiHFBC30A-E3 IRFBC30A SiHFBC30A ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 41 mH, Rg = 25 Ω, IAS =...