iscN-Channel MOSFET Transistor
IRFBE30
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =3.0Ω (MAX) ·Enhancement mod...
iscN-Channel MOSFET
Transistor
IRFBE30
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =3.0Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
800
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
4.1
A
IDM
Drain Current-Single Pulsed
16
A
PD
Total Dissipation @TC=25℃
125
W
Tj
Max. Operating Junction Temperature -55~150
℃
Tstg
Storage Temperature
-55~150
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 1
UNIT ℃/W
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iscN-Channel MOSFET
Transistor
IRFBE30
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
800
VGS(th)
Gate Threshold Voltage
VDS= 10V; ID=0.25mA
2
V
4
V
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=2.5A
3.0
Ω
IGSS IDSS VSDF
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
Drain-Source Leakage Current
VDS=800V; VGS= 0V VDS=640V; VGS= 0V;TJ=125℃
Diode forward voltage
IDR =4.1A, VGS = 0 V
±100 nA
100 500
μA
1.8
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without noti...
