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IRFBG20 Datasheet, Equivalent, N-Channel MOSFET.N-Channel MOSFET N-Channel MOSFET |
| Part | IRFBG20 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | iscN-Channel MOSFET Transistor
IRFBG20
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 11Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=0. 25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1000 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 1. 4 A IDM Drain Current-Single Pulsed 5. 6 A PD Total Dissipation @TC=25℃ 54 W Tj Max. Operating Junction Temp. |
| Manufacture | INCHANGE |
| Datasheet |
| Part | IRFBG20 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | iscN-Channel MOSFET Transistor
IRFBG20
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 11Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=0. 25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1000 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 1. 4 A IDM Drain Current-Single Pulsed 5. 6 A PD Total Dissipation @TC=25℃ 54 W Tj Max. Operating Junction Temp. |
| Manufacture | INCHANGE |
| Datasheet |
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