IRFBG20

iscN-Channel MOSFET Transistor IRFBG20 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 11Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1000 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 1.4 A IDM Drain Current-Single Pulsed 5.6 A PD Total Dissipation @TC=25℃ 54 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 2.3 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark iscN-Channel MOSFET Transistor IRFBG20 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= 10V; ID=0.25mA 1000 2 V 4 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=0.84A 11 Ω IGSS IDSS VSDF Gate-Source Leakage Current VGS= ±20V;VDS= 0V Drain-Source Leakage Current VDS=1000V; VGS= 0V VDS=800V; VGS= 0V;TJ=125℃ Diode forward voltage IDR =1.4A, VGS = 0 V ±100 nA 100 500 μA 1.5 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without ...