iscN-Channel MOSFET Transistor
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =0.54Ω (MAX) ·Enhancement mode:
Vth =...
iscN-Channel MOSFET
Transistor
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =0.54Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
4.5
A
IDM
Drain Current-Single Pulsed
18
A
PD
Total Dissipation @TC=25℃
27
W
Tj
Max. Operating Junction Temperature -55~150
℃
Tstg
Storage Temperature
-55~150
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 5.5
UNIT ℃/W
IRFI510G
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
iscN-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
VGS(th)
Gate Threshold Voltage
VDS= 10V; ID=0.25mA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=2.7A
IGSS IDSS VSDF
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
Drain-Source Leakage Current
VDS=100V; VGS= 0V VDS=80V; VGS= 0V;TJ=125℃
Diode forward voltage
IDR =4.5A, VGS = 0 V
IRFI510G
MIN TYP MAX UNIT
100
V
2
4
V
0.54
Ω
±100 nA
25 250
μA
2.5
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without n...
