SiHFIB6N60A

www.vishay.com IRFIB6N60A, SiHFIB6N60A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 49 13 20 Single 0.75 TO-220 FULLPAK D G GDS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES Low gate charge Qg results in simple drive requirement Improved gate, avalanche and dynamic dV/dt ruggedness Available Available Fully characterized capacitance and avalanche voltage and current Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. APPLICATIONS Switch mode power supply (SMPS) Uninterruptible power supply High speed power switching High voltage isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) TYPICAL SMPS TOPOLOGIES Single transistor forward Active clamped forward TO-220 FULLPAK IRFIB6N60APbF SiHFIB6N60A-E3 IRFIB6N60A SiHFIB6N60A ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a Linear Derating Factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single Pulse Avalanche Energy b Repetitive Avalanche Current a Repetitive...