iscN-Channel MOSFET Transistor
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =2.2Ω (MAX) ·Enhancement mode:
Vth = ...
iscN-Channel MOSFET
Transistor
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =2.2Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
2.5
A
IDM
Drain Current-Single Pulsed
10
A
PD
Total Dissipation @TC=25℃
35
W
Tj
Max. Operating Junction Temperature -55~150
℃
Tstg
Storage Temperature
-55~150
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 3.6
UNIT ℃/W
IRFIBC30G
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iscN-Channel MOSFET
Transistor
IRFIBC30G
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
600
VGS(th)
Gate Threshold Voltage
VDS= 10V; ID=0.25mA
2
V
4
V
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=1.5A
2.2
Ω
IGSS IDSS VSDF
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
Drain-Source Leakage Current
VDS=600V; VGS= 0V VDS=480V; VGS= 0V;TJ=125℃
Diode forward voltage
IDR =2.5A, VGS = 0 V
±100 nA
100 500
μA
1.6
V
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