iscN-Channel MOSFET Transistor
IRFP048
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤18mΩ @VGS=10V ·Enhancement ...
iscN-Channel MOSFET
Transistor
IRFP048
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤18mΩ @VGS=10V ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
70
A
IDM
Drain Current-Single Pulsed
290
A
PD
Total Dissipation @TC=25℃
190
W
Tj
Max. Operating Junction Temperature -55~175
℃
Tstg
Storage Temperature
-55~175
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 0.8
UNIT ℃/W
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iscN-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
VGS(th)
Gate Threshold Voltage
VDS= 10V; ID=0.25mA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=44A
IGSS IDSS VSDF
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
Drain-Source Leakage Current
VDS=60V; VGS= 0V VDS=48V; VGS= 0V;TJ=125℃
Diode forward voltage
IDR =73A, VGS = 0 V
IRFP048
MIN TYP MAX UNIT
60
V
2.0
4.0
V
18
mΩ
±100 nA
25 250
uA
2.0
V
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