IRFP350LC, SiHFP350LC
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
400
RDS(on) (Ω)
VGS = 10 V
0.30
Qg (M...
IRFP350LC, SiHFP350LC
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
400
RDS(on) (Ω)
VGS = 10 V
0.30
Qg (Max.) (nC)
76
Qgs (nC)
20
Qgd (nC)
37
Configuration
Single
D TO-247AC
S
D G
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced Ciss, Coss, Crss Isolated Central Mounting Hole Dynamic dV/dt Rated Repetitive Avalanche Rated Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of MOSFETs offer the designer a new standard in power
transistors for switching applications. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
TO-247AC IRFP350LCPbF SiHFP350LC-E3 IRFP350LC SiHFP350LC
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Fac...