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IRFP3207Z Datasheet, Equivalent, N-Channel MOSFET.N-Channel MOSFET N-Channel MOSFET |
Part | IRFP3207Z |
---|---|
Description | N-Channel MOSFET |
Feature | isc N-Channel MOSFET Transistor
IRFP320 7Z
FEATURES ·Drain Current –ID= 170 A@ TC=25℃ ·Drain Source Voltage-
: V DSS= 75V(Min) ·Static Drain-Source On- Resistance
: RDS(on) = 4. 1mΩ(Max) ·10 0% avalanche tested ·Minimum Lot-to-Lo t variations for robust device performa nce and reliable operation DESCRIPTION ·High Speed Power Switching ·Hard Sw itched and High Frequency Circuits ABS OLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-So urce Voltage 75 V VGS Gate-Source V oltage-Continuous ±20 V ID Drain C urrent-Continuous 170 A IDM Drain C urrent-Single Pluse 670 A . |
Manufacture | INCHANGE |
Datasheet |
Part | IRFP3207Z |
---|---|
Description | N-Channel MOSFET |
Feature | isc N-Channel MOSFET Transistor
IRFP320 7Z
FEATURES ·Drain Current –ID= 170 A@ TC=25℃ ·Drain Source Voltage-
: V DSS= 75V(Min) ·Static Drain-Source On- Resistance
: RDS(on) = 4. 1mΩ(Max) ·10 0% avalanche tested ·Minimum Lot-to-Lo t variations for robust device performa nce and reliable operation DESCRIPTION ·High Speed Power Switching ·Hard Sw itched and High Frequency Circuits ABS OLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-So urce Voltage 75 V VGS Gate-Source V oltage-Continuous ±20 V ID Drain C urrent-Continuous 170 A IDM Drain C urrent-Single Pluse 670 A . |
Manufacture | INCHANGE |
Datasheet |
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