IRFSL4615

Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGSS Gate-Source Voltage ±20 V ID Drain Current-ContinuousTc=25℃ Tc=100℃ 33 24 A IDM Drain Current-Single Pulsed 140 A PD Total Dissipation @TC=25℃ 144 W Tch Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.05 UNIT ℃/W IRFS4615 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor IRFS4615 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.1mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=21A IGSS IDSS VSDF Gate-Source Leakage Current VGS= ±20V;VDS=0V Drain-Source Leakage Current VDS=150V; VGS= 0V;Tj=25℃ VDS=120V; VGS= 0V;Tj=125℃ Diode forward voltage ISD=21A, VGS = 0 V 150 V 3.0 5.0 V 34.5 42 mΩ ±0.1 μA 20 250 μA 1.3 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time withou...